STGIPQ5C60T-HZ IGBT Modules SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V pfupi-circuit rugged IG
♠ Tsanangudzo yeChigadzirwa
Product Attribute | Attribute Value |
Mugadziri: | STMicroelectronics |
Product Category: | IGBT Modules |
RoHS: | Details |
Product: | IGBT Silicon Carbide Modules |
Configuration: | 3-Phase Inverter |
Muunganidzi- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.7 V |
Anoenderera mberi Muunganidzi Iyezvino pa25 C: | 5 A |
Gate-Emitter Leakage Yazvino: | - |
Pd - Kubvisa Simba: | 13.6 W |
Pakeji / Nyaya: | N2DIP-26 |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 125 C |
Kurongedza: | Tube |
Brand: | STMicroelectronics |
Mounting Style: | Kuburikidza neHole |
Product Type: | IGBT Modules |
Series: | STGIPQ5C60T-HZ |
Factory Pack Quantity: | 360 |
Subcategory: | IGBTs |
Technology: | SiC |
Tradename: | SLLIMM |
Unit Weight: | 0.000141 oz |
♠ SLLIMM™ nano - yechipiri yakatevedzana IPM, 3-chikamu inverter, 5 A, 600 V, pfupi-yedunhu rugged IGBTs
Iyi yechipiri nhevedzano yeSLLIMM (diki yakaderera-kurasikirwa intelligent molded module) -nano inopa compact, yakakwirira-inoshanda AC mota dhizaini mune yakapfava, yakaoma dhizaini.Iyo inoumbwa nenhanhatu dzakagadziridzwa pfupi-rugged trench gedhi maIGBT ane freewheeling diode uye matatu hafu-bhiriji HVICs yekutyaira gedhi, ichipa yakaderera electromagnetic interference (EMI) maitiro ane optimized switching kumhanya.Iyo pasuru yakagadzirirwa kubvumidza zviri nani uye zviri nyore kuputswa-paheatsink, uye yakagadziridzwa yekushanda kwemafuta uye compactness mune yakavakirwa-mukati mota maapplication kana mamwe mashoma emagetsi maapplication uko nzvimbo yegungano inogumira.Iyi IPM inosanganisira aisina kuzvipira kushanda amplifier uye muenzanisi anogona kushandiswa kugadzira inokurumidza uye inoshanda yekudzivirira yedunhu.SLLIMM™ chiratidzo chekutengesa cheSTMicroelectronics.
• IPM 5 A, 600 V, 3-phase IGBT inverter bhiriji rinosanganisira 3 control ICs yegedhi kutyaira uye freewheeling diodes
• 3.3 V, 5 V, 15 V TTL/CMOS kuenzanisa nezviyereso zvine hysteresis uye kudhonza-pasi/ kudhonza-kumusoro zvinopikisa
• Internal bootstrap diode
• Optimized nokuda yakaderera electromagnetic kukanganiswa
• Undervoltage lockout
• Short-circuit rugged TFS IGBTs
• Shutdown basa
• Kupindirana basa
• Op-amp yekunzwa yepamusoro ikozvino
• Muenzanisi wekudzivirira kukanganisa kubva kune overcurrent
• NTC (UL 1434 CA 2 ne4)
• Isolation ratings ye1500 Vrms / min.
• Kusvika ku±2 kV ESD dziviriro (HBM C = 100 pF, R = 1.5 kΩ)
• Kuzivikanwa kweUL: UL 1557, faira E81734
• 3-phase inverters yemotokari inotyaira
• Mawacha ndiro, macompressor efiriji, masisitimu ekudziisa, mafeni ekufefetedza mhepo, mapombi ekudhiraivha nemapombi ekudzokorodza.