SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8

Tsanangudzo Pfupi

Vagadziri: Vishay
Product Category:MOSFET
Data Sheet:SI9945BDY-T1-GE3
Tsanangudzo:MOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS chimiro: RoHS Inoenderana


Product Detail

Features

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Product Tags

♠ Tsanangudzo yeChigadzirwa

Product Attribute Attribute Value
Mugadziri: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Pakeji/Nyaya: SOIC-8
Transistor polarity: N-Channel
Nhamba Yemachiteshi: 2 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Inoenderera Inodonhedza Irizvino: 5.3 A
Rds On - Drain-Source Resistance: 58 mmhm
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gedhi-Mabviro Threshold Voltage: 1 V
Qg - Gate Charge: 13 nC
Minimum Operating Temperature: -55 C
Maximum Operating Temperature: + 150 C
Pd - Kubvisa Simba: 3.1 W
Channel Mode: Kuwedzera
Tradename: TrenchFET
Kurongedza: Reel
Kurongedza: Cheka Tape
Kurongedza: MouseReel
Brand: Vishay Semiconductors
Configuration: Dual
Nguva yekudonha: 10 ns
Forward Transconductance - Min: 15 S
Product Type: MOSFET
Nguva Yekusimuka: 15 ns, 65 ns
Series: SI9
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Yakajairika Kudzima Nguva Yekunonoka: 10 ns, 15 ns
Yakajairika Kubatidza Kunonoka Nguva: 15 ns, 20 ns
Chikamu # Mazita: SI9945BDY-GE3
Unit Weight: 750 mg

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