SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8

Tsanangudzo Pfupi

Vagadziri: Vishay
Product Category:MOSFET
Data Sheet:SI7461DP-T1-GE3
Tsanangudzo:MOSFET P-CH 60V 8.6A PPAK SO-8
RoHS chimiro: RoHS Inoenderana


Product Detail

Features

Product Tags

♠ Tsanangudzo yeChigadzirwa

Product Attribute Attribute Value
Mugadziri: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Pakeji/Nyaya: SOIC-8
Transistor polarity: P-Channel
Nhamba Yemachiteshi: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Inoenderera Inodonhedza Irizvino: 5.7 A
Rds On - Drain-Source Resistance: 42 mmhms
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Vgs th - Gedhi-Mabviro Threshold Voltage: 1 V
Qg - Gate Charge: 24 nC
Minimum Operating Temperature: -55 C
Maximum Operating Temperature: + 150 C
Pd - Kubvisa Simba: 2.5 W
Channel Mode: Kuwedzera
Tradename: TrenchFET
Kurongedza: Reel
Kurongedza: Cheka Tape
Kurongedza: MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Nguva yekudonha: 30 ns
Forward Transconductance - Min: 13 S
Product Type: MOSFET
Nguva Yekusimuka: 42 ns
Series: SI9
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Yakajairika Kudzima Nguva Yekunonoka: 30 ns
Yakajairika Kubatidza Kunonoka Nguva: 14 ns
Chikamu # Mazita: SI9435BDY-E3
Unit Weight: 750 mg

  • Zvakapfuura:
  • Zvinotevera:

  • • TrenchFET® simba MOSFETs

    • Low thermal resistance PowerPAK® package ine yakaderera 1.07 mm profileEC

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