SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Tsanangudzo yeChigadzirwa
| Product Attribute | Attribute Value |
| Mugadziri: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Pakeji/Nyaya: | SC-89-6 |
| Transistor polarity: | N-Channel, P-Channel |
| Nhamba Yemachiteshi: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Inoenderera Inodonhedza Irizvino: | 500 mA |
| Rds On - Drain-Source Resistance: | 1.4 Ohms, 4 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gedhi-Mabviro Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 750 pC, 1.7 nC |
| Minimum Operating Temperature: | -55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Kubvisa Simba: | 280 mW |
| Channel Mode: | Kuwedzera |
| Tradename: | TrenchFET |
| Kurongedza: | Reel |
| Kurongedza: | Cheka Tape |
| Kurongedza: | MouseReel |
| Brand: | Vishay Semiconductors |
| Configuration: | Dual |
| Forward Transconductance - Min: | 200 mS, 100 mS |
| Urefu: | 0.6 mm |
| Urefu: | 1.66 mm |
| Product Type: | MOSFET |
| Series: | SI1 |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Yakajairika Kudzima Nguva Yekunonoka: | 20 ns, 35 ns |
| Yakajairika Kubatidza Kunonoka Nguva: | 15 ns, 20 ns |
| Upamhi: | 1.2 mm |
| Chikamu # Mazita: | SI1029X-GE3 |
| Unit Weight: | 32 mg |
• Halogen-isina Maererano neIEC 61249-2-21 Tsanangudzo
• TrenchFET® Power MOSFETs
• Mutsika Mudiki Kwazvo
• High-Side Kuchinja
• Kudzikira Pakupikisa:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Low Threshold: ± 2 V (typ.)
• Kukurumidza Kuchinja Kumhanya: 15 ns (typ.)
• Gedhi-Mabviro ESD Yakachengetedzwa: 2000 V
• Zvinoenderana neRoHS Directive 2002/95/EC
• Dzorera Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
