Rudzi rutsva rwehafnium-based ferroelectric memory chip yakagadziridzwa uye yakagadzirwa naLiu Ming, Academician weInstitute of Microelectronics, yakaunzwa kuIEEE International Solid-State Circuits Conference (ISSCC) muna 2023, iyo yepamusoro-soro yekubatanidza dhizaini dhizaini.
Yepamusoro-inoshanda yakamisikidzwa isiri-inovhurika ndangariro (eNVM) iri kudiwa zvakanyanya maSOC machipi mumagetsi evatengi, mota dzinozvimiririra, kutonga kwemaindasitiri uye edge zvishandiso zveInternet yezvinhu. Ferroelectric memory (FeRAM) ine zvakanakira kuvimbika kwepamusoro, kushandiswa kwesimba kwakaderera, uye kumhanya kwakanyanya. Inoshandiswa zvakanyanya muhuwandu hukuru hwekurekodha data munguva chaiyo, kazhinji kuverenga nekunyora data, kuderera kwesimba rekushandisa uye yakadzamirirwa SoC/SiP zvigadzirwa. Ferroelectric memory yakavakirwa paPZT zvinhu yakawana kugadzirwa kwakawanda, asi zvinhu zvayo hazvienderane neCMOS tekinoroji uye yakaoma kudzikira, zvichitungamira kubudiriro yemaitiro echinyakare ferroelectric memory inodziviswa zvakanyanya, uye yakamisikidzwa kubatanidzwa kunoda yakaparadzana mutsara wekugadzira tsigiro, yakaoma kusimudzira pamwero mukuru. Iyo miniaturability yehafnium-yakavakirwa ferroelectric memory uye kuenderana kwayo neCMOS tekinoroji inoita kuti ive nzvimbo yekutsvagisa yekunetsekana kunowanzo muacademia neindasitiri. Hafnium-yakavakirwa ferroelectric memory yakaonekwa seyakakosha nzira yekusimudzira yechizvarwa chinotevera chendangariro nyowani. Parizvino, tsvakiridzo yehafnium-based ferroelectric memory ichine matambudziko akadai sekusavimbika kweyuniti yakakwana, kushaikwa kwe chip dhizaini ine yakazara peripheral circuit, uye kumwe kuoneswa kweiyo chip level performance, iyo inomisa kushanda kwayo mueNVM.
Tichifunga nezvematambudziko akatarisana neakamisikidzwa hafnium-based ferroelectric memory, timu yeAcademician Liu Ming kubva kuInstitute of Microelectronics yakagadzira nekushandisa megab-ukuru FeRAM test chip kekutanga pasirese zvichibva pane yakakura-yakakura yekubatanidza chikuva chehafnium-based ferroelectric memory, inoenderana neiyo CMOS-yakakura kubatanidza uye kupedzwa kwakakura kweMOS. capacitor mune 130nm CMOS maitiro. Iyo ECC-inobatsirwa kunyora dhiraivha yedunhu yekunzwa tembiricha uye inonzwika amplifier seketi yekubvisa otomatiki inogadziriswa, uye 1012 cycle durability uye 7ns kunyora uye 5ns kuverenga nguva inowanikwa, ari iwo akanakisa mazinga akashumwa kusvika zvino.
Iyo bepa "A 9-Mb HZO-based Embedded FeRAM ine 1012-Cycle Endurance uye 5/7ns Read/ Nyora uchishandisa ECC-Assisted Data Refresh" yakavakirwa pane zvabuda uye Offset-Kanzura Sense Amplifier "yakasarudzwa muISSCC 2023, uye chip yakasarudzwa muISSCC kuratidzwa kwekutanga kweISSCC kumusangano weJimo. munyori webepa, uye Liu Ming ndiye munyori anowirirana.
Basa rakabatana rinotsigirwa neNational Natural Science Foundation yeChina, National Key Research and Development Program yeBazi reSainzi neTekinoroji, uye B-Kirasi Pilot Project yeChinese Academy yeSainzi.
(Mufananidzo we9Mb Hafnium-based FeRAM chip uye chip performance test)
Nguva yekutumira: Kubvumbi-15-2023
