NDS331N MOSFET N-Ch LL FET Enhancement Mode

Tsanangudzo Pfupi

Vagadziri: ON Semiconductor
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet:NDS331N
Tsanangudzo: MOSFET N-CH 20V 1.3A SSOT3
RoHS chimiro: RoHS Inoenderana


Product Detail

Features

Product Tags

♠ Tsanangudzo yeChigadzirwa

Product Attribute Attribute Value
Mugadziri: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Pakeji / Nyaya: SOT-23-3
Transistor polarity: N-Channel
Nhamba Yemachiteshi: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Inoenderera Inodonhedza Irizvino: 1.3 A
Rds On - Drain-Source Resistance: 210 mm Ohms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gedhi-Mabviro Threshold Voltage: 500 mV
Qg - Gate Charge: 5 nC
Minimum Operating Temperature: -55 C
Maximum Operating Temperature: + 150 C
Pd - Kubvisa Simba: 500 mW
Channel Mode: Kuwedzera
Kurongedza: Reel
Kurongedza: Cheka Tape
Kurongedza: MouseReel
Brand: onsemi / Fairchild
Configuration: Single
Nguva yekudonha: 25 ns
Urefu: 1.12 mm
Urefu: 2.9 mm
Product: MOSFET Diki Chiratidzo
Product Type: MOSFET
Nguva Yekusimuka: 25 ns
Series: NDS331N
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Yakajairika Kudzima Nguva Yekunonoka: 10 ns
Yakajairika Kubatidza Kunonoka Nguva: 5 ns
Upamhi: 1.4 mm
Chikamu # Mazita: NDS331N_NL
Unit Weight: 0.001129 oz

 

♠ N-Channel Logic Level Enhancement Mode Munda Effect Transistor

Aya N −Channel logic level yekusimudzira maitiro emagetsi emagetsi ma transistors anogadzirwa achishandisa ON Semiconductor's proprietary, high cell density, DMOS tekinoroji.Iyi yakanyanya density process inonyanya kurongeka kuti ideredze on-state resistance.Midziyo iyi inonyanya kukodzera kushandiswa kwemagetsi mashoma mumakomputa ekunyorera, nharembozha, makadhi ePCMCIA, uye mamwe maseketi ane bhatiri uko kukurumidza kushandura, uye kuderera kwemagetsi kurasikirwa kunodiwa mune diki diki repamusoro pesekete.


  • Zvakapfuura:
  • Zvinotevera:

  • • 1.3 A, 20 V
    ♦ RDS(pa) = 0.21 @ VGS = 2.7 V
    ♦ RDS(pa) = 0.16 @ VGS = 4.5 V
    • Industry Standard Outline SOT−23 Surface Mount Package Uchishandisa
    Proprietary SUPERSOT−3 Dhizaini yeSuperior Thermal uye Magetsi Kugona
    • High Density Cell Design for Extremely Low RDS(pa)
    • Exceptional On-Resistance and Maximum DC Current Capability
    • Iyi iPb−Mahara Mudziyo

    Related Products