NDS331N MOSFET N-Ch LL FET Enhancement Mode
♠ Tsanangudzo yeChigadzirwa
Product Attribute | Attribute Value |
Mugadziri: | onsemi |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Pakeji / Nyaya: | SOT-23-3 |
Transistor polarity: | N-Channel |
Nhamba Yemachiteshi: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Id - Inoenderera Inodonhedza Irizvino: | 1.3 A |
Rds On - Drain-Source Resistance: | 210 mm Ohms |
Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
Vgs th - Gedhi-Mabviro Threshold Voltage: | 500 mV |
Qg - Gate Charge: | 5 nC |
Minimum Operating Temperature: | -55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Kubvisa Simba: | 500 mW |
Channel Mode: | Kuwedzera |
Kurongedza: | Reel |
Kurongedza: | Cheka Tape |
Kurongedza: | MouseReel |
Brand: | onsemi / Fairchild |
Configuration: | Single |
Nguva yekudonha: | 25 ns |
Urefu: | 1.12 mm |
Urefu: | 2.9 mm |
Product: | MOSFET Diki Chiratidzo |
Product Type: | MOSFET |
Nguva Yekusimuka: | 25 ns |
Series: | NDS331N |
Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Yakajairika Kudzima Nguva Yekunonoka: | 10 ns |
Yakajairika Kubatidza Kunonoka Nguva: | 5 ns |
Upamhi: | 1.4 mm |
Chikamu # Mazita: | NDS331N_NL |
Unit Weight: | 0.001129 oz |
♠ N-Channel Logic Level Enhancement Mode Munda Effect Transistor
Aya N −Channel logic level yekusimudzira maitiro emagetsi emagetsi ma transistors anogadzirwa achishandisa ON Semiconductor's proprietary, high cell density, DMOS tekinoroji.Iyi yakanyanya density process inonyanya kurongeka kuti ideredze on-state resistance.Midziyo iyi inonyanya kukodzera kushandiswa kwemagetsi mashoma mumakomputa ekunyorera, nharembozha, makadhi ePCMCIA, uye mamwe maseketi ane bhatiri uko kukurumidza kushandura, uye kuderera kwemagetsi kurasikirwa kunodiwa mune diki diki repamusoro pesekete.
• 1.3 A, 20 V
♦ RDS(pa) = 0.21 @ VGS = 2.7 V
♦ RDS(pa) = 0.16 @ VGS = 4.5 V
• Industry Standard Outline SOT−23 Surface Mount Package Uchishandisa
Proprietary SUPERSOT−3 Dhizaini yeSuperior Thermal uye Magetsi Kugona
• High Density Cell Design for Extremely Low RDS(pa)
• Exceptional On-Resistance and Maximum DC Current Capability
• Iyi iPb−Mahara Mudziyo