FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series
♠ Tsanangudzo yeChigadzirwa
Product Attribute | Attribute Value |
Mugadziri: | onsemi |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | Kuburikidza neHole |
Pakeji / Nyaya: | TO-251-3 |
Transistor polarity: | N-Channel |
Nhamba Yemachiteshi: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Inoenderera Inodonhedza Irizvino: | 1.9 A |
Rds On - Drain-Source Resistance: | 4.7 Ohms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gedhi-Mabviro Threshold Voltage: | 2 V |
Qg - Gate Charge: | 12 nC |
Minimum Operating Temperature: | -55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Kubvisa Simba: | 2.5 W |
Channel Mode: | Kuwedzera |
Kurongedza: | Tube |
Brand: | onsemi / Fairchild |
Configuration: | Single |
Nguva yekudonha: | 28 ns |
Forward Transconductance - Min: | 5 S |
Urefu: | 6.3 mm |
Urefu: | 6.8 mm |
Product Type: | MOSFET |
Nguva Yekusimuka: | 25 ns |
Series: | FQU2N60C |
Factory Pack Quantity: | 5040 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Yakajairika Kudzima Nguva Yekunonoka: | 24 ns |
Yakajairika Kubatidza Kunonoka Nguva: | 9 ns |
Upamhi: | 2.5 mm |
Unit Weight: | 0.011993 oz |
♠ MOSFET - N-Channel, QFET 600 V, 1.9 A, 4,7
Iyi N-Channel yekusimudzira modhi yemagetsi MOSFET inogadzirwa uchishandisa esemi's proprietary planar stripe uye DMOS tekinoroji.Iyi tekinoroji yeMOSFET yepamusoro yakashongedzerwa zvakanyanya kudzikisa pa-nyika kuramba, uye kupa hukuru hwekuchinja mashandiro uye yakakwirira avalanche simba resimba.Midziyo iyi inokodzera switched modhi magetsi emagetsi, anoshanda simba factor kururamisa (PFC), uye emagetsi marambi mabhora.
• 1.9 A, 600 V, RDS(pa) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
• Yakaderera Gedhi Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Yakaedzwa
• Midziyo iyi haina Halid Yemahara uye inofambirana neRoHS