FDV301N MOSFET N-Ch Digital
♠ Tsanangudzo yeChigadzirwa
| Product Attribute | Attribute Value |
| Mugadziri: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Pakeji / Nyaya: | SOT-23-3 |
| Transistor polarity: | N-Channel |
| Nhamba Yemachiteshi: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Id - Inoenderera Inodonhedza Irizvino: | 220 mA |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - Gedhi-Mabviro Threshold Voltage: | 700 mV |
| Qg - Gate Charge: | 700 pC |
| Minimum Operating Temperature: | -55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Kubvisa Simba: | 350 mW |
| Channel Mode: | Kuwedzera |
| Kurongedza: | Reel |
| Kurongedza: | Cheka Tape |
| Kurongedza: | MouseReel |
| Brand: | onsemi / Fairchild |
| Configuration: | Single |
| Nguva yekudonha: | 6 ns |
| Forward Transconductance - Min: | 0.2 S |
| Urefu: | 1.2 mm |
| Urefu: | 2.9 mm |
| Product: | MOSFET Diki Chiratidzo |
| Product Type: | MOSFET |
| Nguva Yekusimuka: | 6 ns |
| Series: | FDV301N |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Yakajairika Kudzima Nguva Yekunonoka: | 3.5 ns |
| Yakajairika Kubatidza Kunonoka Nguva: | 3.2 ns |
| Upamhi: | 1.3 mm |
| Chikamu # Mazita: | FDV301N_NL |
| Unit Weight: | 0.000282 oz |
♠ Digital FET, N-Channel FDV301N, FDV301N-F169
Iyi N−Channel logic level yekusimudzira maitiro emunda transistor inogadzirwa uchishandisa esemi's proprietary, high cell density, DMOS tekinoroji.Iyi yakanyanya density process inonyanya kurongeka kuti ideredze on-state resistance.Ichi chishandiso chakagadzirirwa kunyanya kune yakaderera voltage application sechinotsiva dhijitari transistors.Sezvo bias resistors isiri kudikanwa, iyi imwe N-chiteshi FET inogona kutsiva akati wandei akasiyana edhijitari transistors, aine akasiyana bias resistor kukosha.
• 25 V, 0.22 A Continuous, 0.5 A Peak
♦ RDS(pa) = 5 @ VGS = 2.7 V
♦ RDS(pa) = 4 @ VGS = 4.5 V
• Yakanyanya Yakaderera Level Gedhi Dhivha Zvinodiwa Inobvumira Yakananga Kushanda mu3 V Masekete.VGS(th) <1.06 V
• Gate-Mabviro Zener ye ESD Ruggedness.> 6 kV Human Body Model
• Tsiva Multiple NPN Digital Transistors neOne DMOS FET
• Mudziyo uyu Pb−Mahara uye Halide Yemahara
